
PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter voltage and 8A continuous collector current. Housed in a 3-pin DPAK (TO-252AA) package with gull-wing leads, offering a maximum power dissipation of 20000mW. Minimum DC current gain is 60 at 2A/1V and 40 at 4A/1V. Operates across a wide temperature range from -55°C to 150°C.
Stmicroelectronics MJD45H11T4-A technical specifications.
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.6(Max) |
| Package Width (mm) | 6.2(Max) |
| Package Height (mm) | 2.4(Max) |
| Seated Plane Height (mm) | 2.63(Max) |
| Pin Pitch (mm) | 2.3(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Type | PNP |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 8A |
| Maximum Power Dissipation | 20000mW |
| Minimum DC Current Gain | 60@2A@1V|40@4A@1V |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Stmicroelectronics MJD45H11T4-A to view detailed technical specifications.
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