NPN bipolar junction transistor (BJT) in a SOT-32 package. Features a 300V collector-emitter breakdown voltage and a 500mA maximum collector current. Offers a maximum power dissipation of 20.8W and a minimum hFE of 30. Designed for through-hole mounting with a lead-free, RoHS-compliant construction.
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| Package/Case | SOT-32 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 300V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 3V |
| Height | 11.05mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 7.8mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20.8W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 300V |
| Width | 2.9mm |
| RoHS | Compliant |
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