
NPN bipolar junction power transistor with a 4A maximum collector current and 40V collector-emitter breakdown voltage. Features a 40W maximum power dissipation and a transition frequency of 270MHz. Packaged in a TO-126 (SOT-32) through-hole mount, this RoHS compliant component operates from -65°C to 150°C.
Stmicroelectronics MJE521 technical specifications.
| Package/Case | SOT-32 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MJE521 |
| Transition Frequency | 270MHz |
| DC Rated Voltage | 40V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics MJE521 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
