
The MMBT2222A is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 600mA. It has a maximum power dissipation of 350mW and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a TO-236-3 case and is lead-free and RoHS compliant. It has a gain bandwidth product of 270MHz and a minimum current gain of 100.
Stmicroelectronics MMBT2222A technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 270MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 270MHz |
| DC Rated Voltage | 40V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics MMBT2222A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
