
The MMBT2222A is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 600mA. It has a maximum power dissipation of 350mW and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a TO-236-3 case and is lead-free and RoHS compliant. It has a gain bandwidth product of 270MHz and a minimum current gain of 100.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics MMBT2222A datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics MMBT2222A technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 270MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 270MHz |
| DC Rated Voltage | 40V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics MMBT2222A to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
