The MMBT2907A is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. It features a gain bandwidth product of 200MHz and a transition frequency of 200MHz. The device is packaged in a TO-236-3 surface mount package and is suitable for operation over a temperature range of -65°C to 150°C. The MMBT2907A is compliant with RoHS and lead-free standards.
PackageTO-236-3
Current Rating-800mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Stmicroelectronics MMBT2907A technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics MMBT2907A Datasheet
Download the complete datasheet for Stmicroelectronics MMBT2907A to view detailed technical specifications.
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