PD54003-E

RF LDMOS Transistor, 500MHz, 4A, 25V, 12dB Gain, 3W Output

RF Power LDMOS transistor featuring 3W output power at 500MHz with 12dB power gain. This N-CHANNEL device offers a continuous drain current of 4A and a drain to source breakdown voltage of 25V. Operating across a wide temperature range from -65°C to 165°C, it supports frequencies up to 1GHz. Designed for surface mount applications, this RoHS compliant component is packaged for efficient handling.

Frequency500MHz

Voltage Rating25V

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Stmicroelectronics PD54003-E technical specifications.

General

Continuous Drain Current (ID)	4A
Drain to Source Breakdown Voltage	25V
Drain to Source Voltage (Vdss)	25V
Frequency	500MHz
Gain	12dB
Gate to Source Voltage (Vgs)	20V
Lead Free	Lead Free
Max Frequency	1GHz
Max Operating Temperature	165°C
Min Operating Temperature	-65°C
Max Output Power	3W
Max Power Dissipation	52.8W
Mount	Surface Mount
Number of Elements	1
Output Power	3W
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	52.8W
Power Gain	12dB
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Technology	LDMOS
Test Voltage	7.5V
Voltage Rating	25V
DC Rated Voltage	25V