RF Power LDMOS transistor featuring 3W output power at 500MHz with 12dB power gain. This N-CHANNEL device offers a continuous drain current of 4A and a drain to source breakdown voltage of 25V. Operating across a wide temperature range from -65°C to 165°C, it supports frequencies up to 1GHz. Designed for surface mount applications, this RoHS compliant component is packaged for efficient handling.
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Stmicroelectronics PD54003-E technical specifications.
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| Frequency | 500MHz |
| Gain | 12dB |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 3W |
| Max Power Dissipation | 52.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 3W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 52.8W |
| Power Gain | 12dB |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Technology | LDMOS |
| Test Voltage | 7.5V |
| Voltage Rating | 25V |
| DC Rated Voltage | 25V |
| RoHS | Compliant |
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