N-channel LDMOS RF power transistor designed for high-frequency applications up to 500MHz. Features a continuous drain current of 5A, drain-to-source breakdown voltage of 25V, and a maximum output power of 8W. Operates with a gate-to-source voltage of 20V and offers a gain of 11.5dB. This surface-mount component boasts a maximum power dissipation of 73W and a wide operating temperature range from -65°C to 165°C. RoHS compliant and lead-free.
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Stmicroelectronics PD54008-E technical specifications.
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| Frequency | 500MHz |
| Gain | 11.5dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 3.5mm |
| Input Capacitance | 91pF |
| Lead Free | Lead Free |
| Length | 7.5mm |
| Max Frequency | 500MHz |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 8W |
| Max Power Dissipation | 73W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 8W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 73W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Technology | LDMOS |
| Test Voltage | 7.5V |
| Voltage Rating | 25V |
| DC Rated Voltage | 25V |
| Width | 9.4mm |
| RoHS | Compliant |
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