PD54008-E

5A 25V 500MHz RF LDMOS Transistor, 8W Output

N-channel LDMOS RF power transistor designed for high-frequency applications up to 500MHz. Features a continuous drain current of 5A, drain-to-source breakdown voltage of 25V, and a maximum output power of 8W. Operates with a gate-to-source voltage of 20V and offers a gain of 11.5dB. This surface-mount component boasts a maximum power dissipation of 73W and a wide operating temperature range from -65°C to 165°C. RoHS compliant and lead-free.

Frequency500MHz

Voltage Rating25V

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Stmicroelectronics PD54008-E technical specifications.

General

Continuous Drain Current (ID)	5A
Drain to Source Breakdown Voltage	25V
Drain to Source Voltage (Vdss)	25V
Frequency	500MHz
Gain	11.5dB
Gate to Source Voltage (Vgs)	20V
Height	3.5mm
Input Capacitance	91pF
Lead Free	Lead Free
Length	7.5mm
Max Frequency	500MHz
Max Operating Temperature	165°C
Min Operating Temperature	-65°C
Max Output Power	8W
Max Power Dissipation	73W
Mount	Surface Mount
Number of Elements	1
Output Power	8W
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	73W
Radiation Hardening	No
RoHS Compliant	Yes
Technology	LDMOS
Test Voltage	7.5V
Voltage Rating	25V
DC Rated Voltage	25V
Width	9.4mm