N-channel RF MOSFET transistor designed for high-frequency applications. Features a 25V drain-to-source breakdown voltage and a continuous drain current of 5A. Offers a power gain of 15dB at 500MHz, with a maximum operating frequency of 1GHz and a maximum output power of 8W. This surface-mount component is LDMOS technology, rated for 26.7W power dissipation and operates across a temperature range of -65°C to 150°C. Packaged on tape and reel, it is RoHS compliant and lead-free.
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| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| Frequency | 500MHz |
| Gain | 15dB |
| Gate to Source Voltage (Vgs) | 15V |
| Lead Free | Lead Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 8W |
| Max Power Dissipation | 26.7W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 8W |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 26.7W |
| Power Gain | 15dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Technology | LDMOS |
| Test Voltage | 7.5V |
| Voltage Rating | 25V |
| DC Rated Voltage | 3.1V |
| RoHS | Compliant |
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