RF Power LDMOS transistor
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| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Voltage (Vdss) | 25V |
| Frequency | 500MHz |
| Gain | 11.5dB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Frequency | 1GHz |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 8W |
| Max Power Dissipation | 73W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 8W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 73W |
| RoHS Compliant | Yes |
| Technology | LDMOS |
| Test Voltage | 7.5V |
| Voltage Rating | 25V |
| RoHS | Compliant |
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