STMICROELECTRONICS

PD55003-E

Datasheet

RF MOSFET N-CH 40V 2.5A 1GHz 3W 3-Pin PowerSO-10RF

Stmicroelectronics

PD55003-E

Name: PD55003-E Stmicroelectronics
Brand: Stmicroelectronics
SKU: PD55003-E

RF MOSFET N-CH 40V 2.5A 1GHz 3W 3-Pin PowerSO-10RF

N-Channel RF MOSFET transistor featuring 40V drain-source breakdown voltage and 2.5A continuous drain current. Operates at frequencies up to 1GHz with a power gain of 17dB and 3W maximum output power. Designed for surface mount applications with a 3-pin PowerSO-10RF package, offering 31.7W maximum power dissipation and a maximum operating temperature of 165°C. This RoHS compliant component is supplied in a rail/tube package.

Frequency500MHz

Voltage Rating40V

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Stmicroelectronics PD55003-E technical specifications.

General

Continuous Drain Current (ID)	2.5A
Drain to Source Breakdown Voltage	40V
Drain to Source Voltage (Vdss)	40V
Frequency	500MHz
Gain	17dB
Gate to Source Voltage (Vgs)	20V
Height	3.5mm
Lead Free	Lead Free
Length	7.5mm
Max Frequency	1GHz
Max Operating Temperature	165°C
Min Operating Temperature	-65°C
Max Output Power	3W
Max Power Dissipation	31.7W
Mount	Surface Mount
Number of Elements	1
Operating Frequency	1 GHz
Output Power	3W
Package Quantity	400
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	31.7W
Power Gain	17dB
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Test Voltage	12.5V
Voltage Rating	40V
DC Rated Voltage	40V
Width	9.4mm