N-Channel RF MOSFET transistor featuring 40V drain-source breakdown voltage and 2.5A continuous drain current. Operates at frequencies up to 1GHz with a power gain of 17dB and 3W maximum output power. Designed for surface mount applications with a 3-pin PowerSO-10RF package, offering 31.7W maximum power dissipation and a maximum operating temperature of 165°C. This RoHS compliant component is supplied in a rail/tube package.
Frequency500MHz
Voltage Rating40V
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics PD55003-E technical specifications.
General
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
500MHz
Gain
17dB
Gate to Source Voltage (Vgs)
20V
Height
3.5mm
Lead Free
Lead Free
Length
7.5mm
Max Frequency
1GHz
Max Operating Temperature
165°C
Min Operating Temperature
-65°C
Max Output Power
3W
Max Power Dissipation
31.7W
Mount
Surface Mount
Number of Elements
1
Operating Frequency
1 GHz
Output Power
3W
Package Quantity
400
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
31.7W
Power Gain
17dB
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Test Voltage
12.5V
Voltage Rating
40V
DC Rated Voltage
40V
Width
9.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics PD55003-E Datasheet
Download the complete datasheet for Stmicroelectronics PD55003-E to view detailed technical specifications.
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