RF MOSFET N-CHANNEL transistor, 40V drain-source breakdown voltage, 4A continuous drain current, and 8W maximum output power. Features 17dB power gain at 500MHz, with a maximum operating frequency of 1GHz. Housed in a 3-pin PowerSO-10RF (formed lead) surface mount package with dimensions of 7.5mm length, 9.4mm width, and 3.5mm height. Operates across a temperature range of -65°C to 165°C, with 52.8W maximum power dissipation.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics PD55008-E datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| DS Breakdown Voltage-Min | 40V |
| Frequency | 500MHz |
| Gain | 17dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 3.5mm |
| Input Capacitance | 58pF |
| Lead Free | Lead Free |
| Length | 7.5mm |
| Max Frequency | 1GHz |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 8W |
| Max Power Dissipation | 52.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 1 GHz |
| Output Power | 8W |
| Package Quantity | 400 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 52.8W |
| Power Gain | 17dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 12.5V |
| Voltage Rating | 40V |
| DC Rated Voltage | 40V |
| Width | 9.4mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics PD55008-E to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
