RF Power Transistor, N-CHANNEL LDMOS, delivering 15W output power at 12.5V and 500MHz. Features a 40V drain-to-source breakdown voltage and 14dB power gain. Operates up to 1GHz with a maximum operating temperature of 165°C. Packaged in a surface-mount PowerSO-10RF plastic package (SOIC) with dimensions of 7.5mm x 9.4mm x 3.5mm. RoHS compliant and lead-free.
Frequency500MHz
PackageSOIC
Voltage Rating40V
MountingSurface Mount
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Technical Specifications
Stmicroelectronics PD55015-E technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
DS Breakdown Voltage-Min
40V
Frequency
500MHz
Gain
14dB
Gate to Source Voltage (Vgs)
20V
Height
3.5mm
Input Capacitance
89pF
Lead Free
Lead Free
Length
7.5mm
Max Frequency
1GHz
Max Operating Temperature
165°C
Min Operating Temperature
-65°C
Max Output Power
15W
Max Power Dissipation
73W
Mount
Surface Mount
Number of Elements
1
Operating Frequency
1 GHz
Output Power
15W
Package Quantity
400
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
73W
Power Gain
14dB
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Test Voltage
12.5V
Voltage Rating
40V
Width
9.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics PD55015-E Datasheet
Download the complete datasheet for Stmicroelectronics PD55015-E to view detailed technical specifications.
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