RF MOSFET N-CHANNEL transistor, 40V drain-source breakdown voltage, 7A continuous drain current, and 25W output power. Features 14.5dB power gain at 500MHz, with a maximum operating frequency of 1GHz. Packaged in a 3-pin PowerSO-10RF (straight lead) surface-mount package, this RoHS compliant component operates from -65°C to 165°C.
Frequency500MHz
PackageSOIC
Voltage Rating40V
MountingSurface Mount
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Technical Specifications
Stmicroelectronics PD55025S-E technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Frequency | 500MHz |
| Gain | 14.5dB |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 25W |
| Max Power Dissipation | 79W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 25W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 79W |
| Power Gain | 14dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Technology | LDMOS |
| Test Voltage | 12.5V |
| Voltage Rating | 40V |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics PD55025S-E Datasheet
Download the complete datasheet for Stmicroelectronics PD55025S-E to view detailed technical specifications.
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