N-channel LDMOS RF transistor delivering 35W output power at 500MHz and 12.5V test voltage. Features a 40V drain-to-source breakdown voltage, 7A continuous drain current, and 16.9dB power gain. Operates across a wide temperature range from -65°C to 165°C, with a maximum operating frequency of 1GHz. Packaged in a PowerSO-10RF surface-mount plastic package, this RoHS-compliant component is ideal for demanding RF applications.
Frequency500MHz
Voltage Rating40V
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics PD55035-E technical specifications.
General
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Frequency | 500MHz |
| Gain | 16.9dB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Frequency | 1GHz |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 35W |
| Max Power Dissipation | 95W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 35W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 95W |
| Power Gain | 16.9dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Technology | LDMOS |
| Test Voltage | 12.5V |
| Voltage Rating | 40V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics PD55035-E Datasheet
Download the complete datasheet for Stmicroelectronics PD55035-E to view detailed technical specifications.
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