
N-Channel RF MOSFET transistor, 18V drain-source voltage, 1.5A continuous drain current. Features 1W maximum output power, 15dB power gain, and operates up to 1GHz. Housed in a SOT-89 surface mount package, this component offers a wide operating temperature range from -65°C to 150°C. RoHS compliant and lead-free.
Stmicroelectronics PD84001 technical specifications.
| Package/Case | SOT-89 |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Voltage (Vdss) | 18V |
| DS Breakdown Voltage-Min | 18V |
| Frequency | 870MHz |
| Gain | 15dB |
| Gate to Source Voltage (Vgs) | 15V |
| Lead Free | Lead Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 1W |
| Max Power Dissipation | 6W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 1 GHz |
| Output Power | 1W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 6W |
| Power Gain | 15dB |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Test Voltage | 7.5V |
| Voltage Rating | 18V |
| Weight | 0.004603oz |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics PD84001 to view detailed technical specifications.
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