N-channel RF MOSFET transistor for surface mount applications, featuring a 40V drain-to-source voltage and 2A continuous drain current. Delivers 4W output power at 870MHz with 17dB power gain, operating up to 1GHz. Housed in a SOT-89 package with a maximum power dissipation of 6W and an operating temperature range of -65°C to 150°C. Packaged in tape and reel for automated assembly.
Stmicroelectronics PD85004 technical specifications.
| Package/Case | SOT-89 |
| Continuous Drain Current (ID) | 2A |
| Current Rating | 4A |
| Drain to Source Voltage (Vdss) | 40V |
| Frequency | 870MHz |
| Gain | 17dB |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 1.6mm |
| Input Capacitance | 16pF |
| Length | 4.6mm |
| Max Frequency | 1GHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 5W |
| Max Power Dissipation | 6W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Operating Frequency | 1 GHz |
| Output Power | 4W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 6W |
| Power Gain | 17dB |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Test Voltage | 13.6V |
| Voltage Rating | 40V |
| Weight | 0.004603oz |
| Width | 2.6mm |
| RoHS | Compliant |
No datasheet is available for this part.
