Stmicroelectronics
PN2907A
PN2907A PNP Bipolar Junction Transistor 60V 600mA 500mW Through Hole TO-226-3
The PN2907A is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 600mA. It has a maximum power dissipation of 500mW and is packaged in a TO-226-3 through-hole package. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-226-3
Voltage60V
Current Rating-600mA
MountingThrough Hole
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Technical Specifications
Stmicroelectronics PN2907A technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 2500 |
| Packaging | Bulk |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Voltage | 60V |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics PN2907A Datasheet
Download the complete datasheet for Stmicroelectronics PN2907A to view detailed technical specifications.
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