The PN2907A-AP is a PNP bipolar junction transistor with a collector-emitter voltage rating of 60V and a maximum collector current of 600mA. It has a maximum power dissipation of 500mW and is packaged in a TO-92 case with a through-hole mount. The transistor operates over a temperature range of -65°C to 150°C and is RoHS compliant. It has a minimum current gain of 100 and a gain bandwidth product of 200MHz.
Stmicroelectronics PN2907A-AP technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -60V |
| Collector-emitter Voltage-Max | 60V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | PN2907A |
| DC Rated Voltage | -60V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics PN2907A-AP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.