N-channel Silicon Carbide Power MOSFET featuring 1200V drain-to-source breakdown voltage and 40A continuous drain current. This through-hole component offers a low 80mΩ typical drain-to-source resistance at 150°C junction temperature and a maximum power dissipation of 270W. Designed for high-temperature operation up to 200°C, it boasts fast switching characteristics with a 28ns fall time and 19ns turn-on delay. The MOSFET is housed in a TO-247-3 package and is RoHS compliant.
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Stmicroelectronics SCT30N120 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.6V |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 19ns |
| Weight | 1.340411oz |
| RoHS | Compliant |
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