SCT30N120

N-channel Silicon Carbide Power MOSFET featuring 1200V drain-to-source breakdown voltage and 40A continuous drain current. This through-hole component offers a low 80mΩ typical drain-to-source resistance at 150°C junction temperature and a maximum power dissipation of 270W. Designed for high-temperature operation up to 200°C, it boasts fast switching characteristics with a 28ns fall time and 19ns turn-on delay. The MOSFET is housed in a TO-247-3 package and is RoHS compliant.