Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
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Stmicroelectronics SCTW90N65G2V technical specifications.
| Max Operating Temperature | 200 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| REACH | not_compliant |
| Military Spec | False |
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