This automotive-grade silicon carbide power MOSFET is rated for 650 V drain-source voltage and 45 A continuous drain current at TC = 25 °C. It uses ST's second-generation SiC MOSFET technology and provides 55 mΩ typical on-resistance with low capacitance and a fast, robust intrinsic body diode. The device is AEC-Q101 qualified, operates with a recommended gate-source range of -5 V to 18 V, and is housed in a HiP247 long leads package. It is intended for switching mode power supplies, EV chargers, and DC-DC converters.
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| Drain-Source Voltage | 650V |
| Gate-Source Voltage | -10 to 22V |
| Recommended Gate-Source Voltage Range | -5 to 18V |
| Continuous Drain Current @ TC=25°C | 45A |
| Continuous Drain Current @ TC=100°C | 35A |
| Pulsed Drain Current | 90A |
| Total Power Dissipation @ TC=25°C | 240W |
| Storage Temperature Range | -55 to 200°C |
| Thermal Resistance Junction-Case | 0.72°C/W |
| Thermal Resistance Junction-Ambient | 40°C/W |
| Gate Threshold Voltage | 1.8 typ 3.2 max 5V |
| Static Drain-Source On-Resistance | 45 typ, 67 max @ VGS=20 V, ID=20 AmΩ |
| Input Capacitance | 1370pF |
| Output Capacitance | 125pF |
| Reverse Transfer Capacitance | 30pF |
| Total Gate Charge | 73nC |
| Turn-On Switching Energy | 100µJ |
| Turn-Off Switching Energy | 35µJ |
| Turn-On Delay Time | 16ns |
| Rise Time | 9ns |
| Turn-Off Delay Time | 35ns |
| Fall Time | 14ns |
| Reverse Diode Forward Voltage | 3.3V |
| Reverse Recovery Time | 18ns |
| Reverse Recovery Charge | 85nC |
| Reverse Recovery Current | 7A |
| REACH | not_compliant |
| Military Spec | False |
