NPN RF transistor designed for HF SSB applications. Features a 55V collector-emitter breakdown voltage and 20A continuous collector current. Offers a minimum gain of 18 and a maximum power dissipation of 318W. Operates across a wide temperature range from -65°C to 150°C. Available in a surface mount, screw-mount package.
PackageM
Current Rating20A
MountingSurface Mount, Screw
PolarityNPN
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Technical Specifications
Stmicroelectronics SD1726 technical specifications.
General
| Package/Case | M |
| Collector Base Voltage (VCBO) | 110V |
| Collector Emitter Breakdown Voltage | 55V |
| Collector-emitter Voltage-Max | 55V |
| Continuous Collector Current | 20A |
| Current Rating | 20A |
| Emitter Base Voltage (VEBO) | 4V |
| Gain | 14dB |
| Height | 7.11mm |
| hFE Min | 18 |
| Lead Free | Lead Free |
| Length | 24.89mm |
| Max Collector Current | 20A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 318W |
| Mount | Surface Mount, Screw |
| Package Quantity | 50 |
| Packaging | Tray |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 55V |
| Width | 12.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics SD1726 Datasheet
Download the complete datasheet for Stmicroelectronics SD1726 to view detailed technical specifications.
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