NPN RF transistor designed for HF SSB applications. Features a 55V collector-emitter breakdown voltage and 20A continuous collector current. Offers a minimum gain of 18 and a maximum power dissipation of 318W. Operates across a wide temperature range from -65°C to 150°C. Available in a surface mount, screw-mount package.
PackageM
Current Rating20A
MountingSurface Mount, Screw
PolarityNPN
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Technical Specifications
Stmicroelectronics SD1726 technical specifications.
General
Package/Case
M
Collector Base Voltage (VCBO)
110V
Collector Emitter Breakdown Voltage
55V
Collector-emitter Voltage-Max
55V
Continuous Collector Current
20A
Current Rating
20A
Emitter Base Voltage (VEBO)
4V
Gain
14dB
Height
7.11mm
hFE Min
18
Lead Free
Lead Free
Length
24.89mm
Max Collector Current
20A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
318W
Mount
Surface Mount, Screw
Package Quantity
50
Packaging
Tray
Polarity
NPN
Radiation Hardening
No
RoHS Compliant
Yes
DC Rated Voltage
55V
Width
12.83mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics SD1726 Datasheet
Download the complete datasheet for Stmicroelectronics SD1726 to view detailed technical specifications.
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