
NPN RF Power Transistor for VHF band applications. Features a 55V collector-emitter breakdown voltage and 10A continuous collector current. Operates from -65°C to 150°C with a maximum power dissipation of 233W. Packaged in a 0.500 inch plastic M164 case with stud/chassis mount. This RoHS compliant component offers 14dB gain.
Stmicroelectronics SD1727 technical specifications.
| Package/Case | M |
| Collector Base Voltage (VCBO) | 110V |
| Collector Emitter Breakdown Voltage | 55V |
| Collector-emitter Voltage-Max | 55V |
| Continuous Collector Current | 10A |
| Current Rating | 10A |
| Emitter Base Voltage (VEBO) | 4V |
| Gain | 14dB |
| Height | 21.08mm |
| hFE Min | 18 |
| Lead Free | Lead Free |
| Length | 16mm |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 233W |
| Mount | Stud, Chassis |
| Package Quantity | 40 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 110V |
| Width | 16mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics SD1727 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
