NPN RF Power Transistor for VHF band applications. Features a 55V collector-emitter breakdown voltage and 10A continuous collector current. Operates from -65°C to 150°C with a maximum power dissipation of 233W. Packaged in a 0.500 inch plastic M164 case with stud/chassis mount. This RoHS compliant component offers 14dB gain.
PackageM
Current Rating10A
MountingStud, Chassis
PolarityNPN
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Technical Specifications
Stmicroelectronics SD1727 technical specifications.
General
Package/Case
M
Collector Base Voltage (VCBO)
110V
Collector Emitter Breakdown Voltage
55V
Collector-emitter Voltage-Max
55V
Continuous Collector Current
10A
Current Rating
10A
Emitter Base Voltage (VEBO)
4V
Gain
14dB
Height
21.08mm
hFE Min
18
Lead Free
Lead Free
Length
16mm
Max Collector Current
10A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
233W
Mount
Stud, Chassis
Package Quantity
40
Packaging
Bulk
Polarity
NPN
Radiation Hardening
No
RoHS Compliant
Yes
DC Rated Voltage
110V
Width
16mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics SD1727 Datasheet
Download the complete datasheet for Stmicroelectronics SD1727 to view detailed technical specifications.
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