NPN RF transistor designed for HF SSB applications, featuring a 55V collector-emitter breakdown voltage and a 40A continuous collector current. This surface mount component offers a maximum power dissipation of 330W and an output power of 200W at an operating frequency of 13.56 MHz. With a minimum gain of 17dB and a maximum operating temperature of 200°C, it provides robust performance for demanding RF and microwave systems.
Stmicroelectronics SD1728 technical specifications.
| Package/Case | M |
| Collector Base Voltage (VCBO) | 110V |
| Collector Emitter Breakdown Voltage | 55V |
| Collector Emitter Voltage (VCEO) | 55V |
| Collector-emitter Voltage-Max | 55V |
| Continuous Collector Current | 40A |
| Current Rating | 40A |
| Emitter Base Voltage (VEBO) | 4V |
| Gain | 17dB |
| Height | 7.11mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 28.96mm |
| Max Collector Current | 40A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 330W |
| Mount | Surface Mount, Screw |
| Number of Elements | 1 |
| Operating Frequency | 13.56 MHz |
| Output Power | 200W |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 110V |
| Width | 16.13mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics SD1728 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.