NPN RF Power Transistor designed for HF band applications. Features a 55V collector-emitter breakdown voltage and 20A continuous collector current. Offers a minimum gain of 15 and a maximum power dissipation of 233W. Packaged in a plastic M174 (FM-4) case with surface mount and screw mounting options. Operates across a wide temperature range from -65°C to 150°C, is lead-free, and RoHS compliant.
PackageM
Current Rating20A
MountingSurface Mount, Screw
PolarityNPN
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Technical Specifications
Stmicroelectronics SD1731 technical specifications.
General
Package/Case
M
Collector Base Voltage (VCBO)
110V
Collector Emitter Breakdown Voltage
55V
Collector-emitter Voltage-Max
55V
Continuous Collector Current
20A
Current Rating
20A
Emitter Base Voltage (VEBO)
4V
Gain
13dB
Height
7.11mm
hFE Min
15
Lead Free
Lead Free
Length
24.89mm
Max Collector Current
20A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
233W
Mount
Surface Mount, Screw
Package Quantity
50
Packaging
Tray
Polarity
NPN
Radiation Hardening
No
RoHS Compliant
Yes
DC Rated Voltage
110V
Width
12.83mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics SD1731 Datasheet
Download the complete datasheet for Stmicroelectronics SD1731 to view detailed technical specifications.
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