N-channel RF transistor delivering 150W output power at 175MHz and 230MHz operating frequencies. Features a 125V drain-to-source breakdown voltage and 20A continuous drain current. Designed for high-frequency applications, this DMOS transistor offers 15dB gain and a maximum power dissipation of 389W. Housed in an M package for screw mounting, it operates across a wide temperature range from -65°C to 200°C and is RoHS compliant.
Frequency175MHz
PackageM
Voltage Rating125V
MountingScrew
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Technical Specifications
Stmicroelectronics SD2931-10 technical specifications.
General
Package/Case
M
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
125V
Drain to Source Voltage (Vdss)
125V
DS Breakdown Voltage-Min
125V
Frequency
175MHz
Gain
15dB
Gate to Source Voltage (Vgs)
20V
Input Capacitance
480pF
Lead Free
Lead Free
Max Frequency
230MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
150W
Max Power Dissipation
389W
Mount
Screw
Number of Elements
1
Operating Frequency
230 MHz
Output Power
150W
Package Quantity
50
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
389W
RoHS Compliant
Yes
Test Voltage
50V
Voltage Rating
125V
DC Rated Voltage
125V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics SD2931-10 Datasheet
Download the complete datasheet for Stmicroelectronics SD2931-10 to view detailed technical specifications.
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