N-channel RF transistor delivering 150W output power at 175MHz and 230MHz operating frequencies. Features a 125V drain-to-source breakdown voltage and 20A continuous drain current. Designed for high-frequency applications, this DMOS transistor offers 15dB gain and a maximum power dissipation of 389W. Housed in an M package for screw mounting, it operates across a wide temperature range from -65°C to 200°C and is RoHS compliant.
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| Package/Case | M |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 125V |
| Drain to Source Voltage (Vdss) | 125V |
| DS Breakdown Voltage-Min | 125V |
| Frequency | 175MHz |
| Gain | 15dB |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 480pF |
| Lead Free | Lead Free |
| Max Frequency | 230MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 150W |
| Max Power Dissipation | 389W |
| Mount | Screw |
| Number of Elements | 1 |
| Operating Frequency | 230 MHz |
| Output Power | 150W |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 389W |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 125V |
| DC Rated Voltage | 125V |
| RoHS | Compliant |
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