RF MOSFET N-CHANNEL transistor featuring 125V drain-to-source breakdown voltage and 40A continuous drain current. Operates at frequencies up to 250MHz with a typical gain of 16dB. This component offers 500W maximum power dissipation and 300W output power, suitable for demanding applications. Designed for screw mounting in a 5-pin M-244 case, it operates within a temperature range of -65°C to 150°C and is RoHS compliant.
Frequency175MHz
PackageM
Voltage Rating125V
Current Rating40A
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Technical Specifications
Stmicroelectronics SD2932W technical specifications.
General
Package/Case
M
Continuous Drain Current (ID)
40A
Current Rating
40A
Drain to Source Breakdown Voltage
125V
Drain to Source Voltage (Vdss)
125V
DS Breakdown Voltage-Min
125V
Frequency
175MHz
Gain
16dB
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Frequency
250MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500W
Mount
Screw
Number of Elements
2
Output Power
300W
Package Quantity
15
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
500W
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
50V
Voltage Rating
125V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics SD2932W Datasheet
Download the complete datasheet for Stmicroelectronics SD2932W to view detailed technical specifications.
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