High-power RF transistor delivering 350W output power at 175MHz, featuring a 130V drain-to-source breakdown voltage and 40A continuous drain current. This N-channel DMOS device offers 17dB power gain and operates across a wide temperature range from -65°C to 200°C. Designed for HF/VHF applications, it supports screw and surface mounting with a 50V test voltage and 250MHz maximum frequency. The component is RoHS compliant and lead-free, packaged for rail/tube distribution.
Frequency175MHz
PackageM
Voltage Rating130V
MountingScrew, Surface Mount
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Technical Specifications
Stmicroelectronics SD2942 technical specifications.
General
Package/Case
M
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
130V
Drain to Source Voltage (Vdss)
130V
DS Breakdown Voltage-Min
130V
Frequency
175MHz
Gain
17dB
Gate to Source Voltage (Vgs)
20V
Input Capacitance
415pF
Lead Free
Lead Free
Max Frequency
250MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
350W
Max Power Dissipation
500W
Mount
Screw, Surface Mount
Number of Elements
1
Output Power
350W
Package Quantity
15
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
500W
Power Gain
17dB
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
50V
Voltage Rating
130V
DC Rated Voltage
130V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics SD2942 Datasheet
Download the complete datasheet for Stmicroelectronics SD2942 to view detailed technical specifications.
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