The SD56120C is a high-power N-channel MOSFET from Stmicroelectronics. It features a maximum operating temperature of 150°C and a maximum power dissipation of 217W. The device has a drain to source breakdown voltage of 72V and a continuous drain current of 14A. It operates at a frequency of 860MHz and has a gain of 16dB. The SD56120C is packaged in a M package and is available in quantities of 20 per box.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics SD56120C datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | M |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 72V |
| Drain to Source Voltage (Vdss) | 72V |
| Frequency | 860MHz |
| Gain | 16dB |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 217W |
| Output Power | 100W |
| Package Quantity | 20 |
| Packaging | Box |
| Polarity | N-CHANNEL |
| Power Dissipation | 217W |
| Technology | LDMOS |
| Test Voltage | 28V |
| Voltage Rating | 72V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics SD56120C to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
