120W LDMOS RF transistor featuring N-CHANNEL polarity and a push-pull package. Operates across a frequency range of 470 to 860MHz with a maximum operating frequency of 1GHz. Delivers 120W output power with a continuous drain current of 14A and a drain-to-source voltage rating of 65V. Offers a gain of 16dB and a maximum power dissipation of 236W. Designed for screw mounting and operates within a temperature range of -65°C to 200°C. RoHS compliant and lead-free.
Frequency860MHz
PackageM
Voltage Rating65V
MountingScrew
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Technical Specifications
Stmicroelectronics SD56120M technical specifications.
General
Package/Case
M
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
65V
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
860MHz
Gain
16dB
Gate to Source Voltage (Vgs)
20V
Input Capacitance
221pF
Lead Free
Lead Free
Max Frequency
1GHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
120W
Max Power Dissipation
236W
Mount
Screw
Number of Elements
2
Output Power
120W
Package Quantity
15
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
236W
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
32V
Voltage Rating
65V
DC Rated Voltage
65V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics SD56120M Datasheet
Download the complete datasheet for Stmicroelectronics SD56120M to view detailed technical specifications.
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