N-channel LDMOS transistor designed for RF applications, delivering 30W output power at 28V test voltage. Operates efficiently from HF up to 1GHz, with a typical gain of 15dB at 945MHz. Features a 65V drain-to-source breakdown voltage and a continuous drain current of 4A. Housed in an M package for screw mounting, this RoHS compliant component operates across a wide temperature range of -65°C to 200°C.
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| Package/Case | M |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 945MHz |
| Gain | 15dB |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 58pF |
| Lead Free | Lead Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 30W |
| Max Power Dissipation | 74W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 30W |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 74W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| RoHS | Compliant |
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