N-channel LDMOS transistor designed for RF applications, delivering 30W output power at 28V test voltage. Operates efficiently from HF up to 1GHz, with a typical gain of 15dB at 945MHz. Features a 65V drain-to-source breakdown voltage and a continuous drain current of 4A. Housed in an M package for screw mounting, this RoHS compliant component operates across a wide temperature range of -65°C to 200°C.
Frequency945MHz
PackageM
Voltage Rating65V
MountingScrew
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Technical Specifications
Stmicroelectronics SD57030 technical specifications.
General
Package/Case
M
Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
65V
Drain to Source Voltage (Vdss)
65V
Frequency
945MHz
Gain
15dB
Gate to Source Voltage (Vgs)
20V
Input Capacitance
58pF
Lead Free
Lead Free
Max Frequency
1GHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
30W
Max Power Dissipation
74W
Mount
Screw
Number of Elements
1
Output Power
30W
Package Quantity
25
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
74W
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
28V
Voltage Rating
65V
DC Rated Voltage
65V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics SD57030 Datasheet
Download the complete datasheet for Stmicroelectronics SD57030 to view detailed technical specifications.
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