STMICROELECTRONICS

SD57030

Datasheet

30W 1GHz RF LDMOS Transistor, N-CH, 65V, 4A

Stmicroelectronics

SD57030

Name: SD57030 Stmicroelectronics
Brand: Stmicroelectronics
SKU: SD57030

30W 1GHz RF LDMOS Transistor, N-CH, 65V, 4A

N-channel LDMOS transistor designed for RF applications, delivering 30W output power at 28V test voltage. Operates efficiently from HF up to 1GHz, with a typical gain of 15dB at 945MHz. Features a 65V drain-to-source breakdown voltage and a continuous drain current of 4A. Housed in an M package for screw mounting, this RoHS compliant component operates across a wide temperature range of -65°C to 200°C.

Frequency945MHz

PackageM

Voltage Rating65V

MountingScrew

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Technical Specifications

Stmicroelectronics SD57030 technical specifications.

General

Package/Case	M
Continuous Drain Current (ID)	4A
Drain to Source Breakdown Voltage	65V
Drain to Source Voltage (Vdss)	65V
Frequency	945MHz
Gain	15dB
Gate to Source Voltage (Vgs)	20V
Input Capacitance	58pF
Lead Free	Lead Free
Max Frequency	1GHz
Max Operating Temperature	200°C
Min Operating Temperature	-65°C
Max Output Power	30W
Max Power Dissipation	74W
Mount	Screw
Number of Elements	1
Output Power	30W
Package Quantity	25
Packaging	Bulk
Polarity	N-CHANNEL
Power Dissipation	74W
Radiation Hardening	No
RoHS Compliant	Yes
Test Voltage	28V
Voltage Rating	65V
DC Rated Voltage	65V