N-channel RF MOSFET transistor with 65V drain-source breakdown voltage and 5A continuous drain current. Features 45W maximum output power and 93W maximum power dissipation. Operates up to 1GHz with a typical power gain of 15dB at 945MHz. Housed in a 3-pin M-243 case suitable for panel or screw mounting, with a wide operating temperature range of -65°C to 200°C.
Frequency945MHz
PackageM
Voltage Rating65V
MountingPanel, Screw
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Technical Specifications
Stmicroelectronics SD57045 technical specifications.
General
Package/Case
M
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
65V
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
945MHz
Gain
13dB
Gate to Source Voltage (Vgs)
20V
Height
4.45mm
Input Capacitance
80pF
Lead Free
Lead Free
Length
20.57mm
Max Frequency
1GHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
45W
Max Power Dissipation
93W
Mount
Panel, Screw
Number of Elements
1
Output Power
45W
Package Quantity
25
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
93W
Power Gain
15dB
Radiation Hardening
No
RoHS Compliant
Yes
Test Voltage
28V
Voltage Rating
65V
DC Rated Voltage
65V
Width
6.1mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics SD57045 Datasheet
Download the complete datasheet for Stmicroelectronics SD57045 to view detailed technical specifications.
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