N-channel RF MOSFET transistor with 65V drain-source breakdown voltage and 5A continuous drain current. Features 45W maximum output power and 93W maximum power dissipation. Operates up to 1GHz with a typical power gain of 15dB at 945MHz. Housed in a 3-pin M-243 case suitable for panel or screw mounting, with a wide operating temperature range of -65°C to 200°C.
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| Package/Case | M |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 945MHz |
| Gain | 13dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.45mm |
| Input Capacitance | 80pF |
| Lead Free | Lead Free |
| Length | 20.57mm |
| Max Frequency | 1GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 45W |
| Max Power Dissipation | 93W |
| Mount | Panel, Screw |
| Number of Elements | 1 |
| Output Power | 45W |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 93W |
| Power Gain | 15dB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| Width | 6.1mm |
| RoHS | Compliant |
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