60W LDMOS RF Transistor for high-frequency applications up to 1GHz. Features 65V drain-to-source breakdown voltage and 7A continuous drain current. Delivers 15dB gain at 945MHz with 60W output power at 28V test voltage. Operates across a wide temperature range from -65°C to 200°C. N-channel polarity, lead-free, and RoHS compliant.
Frequency945MHz
PackageM
Voltage Rating65V
MountingScrew
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Technical Specifications
Stmicroelectronics SD57060 technical specifications.
General
| Package/Case | M |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 945MHz |
| Gain | 15dB |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 88pF |
| Lead Free | Lead Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 60W |
| Max Power Dissipation | 108W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 60W |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 108W |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics SD57060 Datasheet
Download the complete datasheet for Stmicroelectronics SD57060 to view detailed technical specifications.
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