60W LDMOS RF Transistor, N-CHANNEL, 65V Drain to Source Breakdown Voltage, operating up to 1GHz. Features 15dB gain, 7A continuous drain current, and 60W output power at 28V test voltage. Housed in a flangeless M package for surface mounting, this transistor offers a wide operating temperature range from -65°C to 200°C.
Frequency945MHz
PackageM
Voltage Rating65V
MountingSurface Mount
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Technical Specifications
Stmicroelectronics SD57060-01 technical specifications.
General
Package/Case
M
Continuous Drain Current (ID)
7A
Drain to Source Breakdown Voltage
65V
Drain to Source Voltage (Vdss)
65V
DS Breakdown Voltage-Min
65V
Frequency
945MHz
Gain
15dB
Gate to Source Voltage (Vgs)
20V
Input Capacitance
88pF
Lead Free
Contains Lead
Max Frequency
1GHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Output Power
60W
Max Power Dissipation
108W
Mount
Surface Mount
Number of Elements
1
Output Power
60W
Package Quantity
25
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
108W
RoHS Compliant
Yes
Test Voltage
28V
Voltage Rating
65V
DC Rated Voltage
65V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics SD57060-01 Datasheet
Download the complete datasheet for Stmicroelectronics SD57060-01 to view detailed technical specifications.
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