
High-power RF transistor delivering 120W output power at 28V test voltage, operating across 700 to 1000MHz with a 960MHz typical frequency and 14dB gain. Features a 65V drain-to-source breakdown voltage and 14A continuous drain current. This N-channel LDMOS transistor is housed in an M package for screw mounting, offering a wide operating temperature range from -65°C to 200°C. It boasts 236W power dissipation and is RoHS compliant.
Stmicroelectronics SD57120 technical specifications.
Download the complete datasheet for Stmicroelectronics SD57120 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
