SD57120

High-power RF transistor delivering 120W output power at 28V test voltage, operating across 700 to 1000MHz with a 960MHz typical frequency and 14dB gain. Features a 65V drain-to-source breakdown voltage and 14A continuous drain current. This N-channel LDMOS transistor is housed in an M package for screw mounting, offering a wide operating temperature range from -65°C to 200°C. It boasts 236W power dissipation and is RoHS compliant.