High-power RF transistor delivering 120W output power at 28V test voltage, operating across 700 to 1000MHz with a 960MHz typical frequency and 14dB gain. Features a 65V drain-to-source breakdown voltage and 14A continuous drain current. This N-channel LDMOS transistor is housed in an M package for screw mounting, offering a wide operating temperature range from -65°C to 200°C. It boasts 236W power dissipation and is RoHS compliant.
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Stmicroelectronics SD57120 technical specifications.
| Package/Case | M |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| DS Breakdown Voltage-Min | 65V |
| Frequency | 960MHz |
| Gain | 14dB |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 169pF |
| Lead Free | Lead Free |
| Max Frequency | 1GHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 120W |
| Max Power Dissipation | 236W |
| Mount | Screw |
| Number of Elements | 2 |
| Output Power | 120W |
| Package Quantity | 15 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 236W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| DC Rated Voltage | 65V |
| RoHS | Compliant |
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