The SGSD100 is a TO-247 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 25A. It has a maximum power dissipation of 130W and operates over a temperature range of -65°C to 150°C. The transistor is lead-free and RoHS compliant, packaged in a rail or tube with 30 devices per package.
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Stmicroelectronics SGSD100 technical specifications.
| Package/Case | TO-247 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 3.5V |
| Current Rating | 25A |
| Emitter Base Voltage (VEBO) | 3.3V |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Max Collector Current | 25A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| RoHS Compliant | Yes |
| DC Rated Voltage | 80V |
| RoHS | Compliant |
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