The SO692 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 300V and a maximum collector current of 100mA. It has a maximum power dissipation of 310mW and is packaged in a TO-236-3 surface mount package. The transistor operates over a temperature range of -65°C to 150°C and is compliant with RoHS regulations. The gain bandwidth product is 50MHz and the transition frequency is also 50MHz.
PackageTO-236-3
Current Rating-100mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Stmicroelectronics SO692 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 310mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -300V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics SO692 Datasheet
Download the complete datasheet for Stmicroelectronics SO692 to view detailed technical specifications.
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