The SOC2222AHRB is a single NPN bipolar junction transistor with a maximum collector-base voltage of 75V and a maximum collector-emitter voltage of 40V. It has a maximum DC collector current of 0.8A and a maximum power dissipation of 730mW. The transistor is made of silicon material and has a minimum DC current gain of 30. It is suitable for surface mount applications and has a maximum operating temperature of 200°C.
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Stmicroelectronics SOC2222AHRB technical specifications.
| Package Family Name | LCC |
| Package/Case | LCC |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 2.54 |
| Package Height (mm) | 1.42(Max) |
| Seated Plane Height (mm) | 1.42(Max) |
| Mounting | Surface Mount |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 75V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 40V |
| Maximum DC Collector Current | 0.8A |
| Maximum Power Dissipation | 730mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
| Cage Code | SCR76 |
| EU RoHS | No |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
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