
N-channel RF power MOSFET designed for HF/VHF/UHF applications. Features a 250V drain-to-source voltage and 20A continuous drain current. Delivers 580W output power at 250 MHz, with a maximum output power of 900W and a gain of 24.6dB. Surface mount device with screw mounting option, operating across a wide temperature range of -65°C to 200°C. RoHS compliant with a maximum power dissipation of 625W.
Stmicroelectronics STAC3932B technical specifications.
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 250V |
| Frequency | 123MHz |
| Gain | 24.6dB |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 5.33mm |
| Input Capacitance | 492pF |
| Length | 34.04mm |
| Max Frequency | 250MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 900W |
| Max Power Dissipation | 625W |
| Mount | Surface Mount, Screw |
| Number of Elements | 2 |
| Operating Frequency | 250 MHz |
| Output Power | 580W |
| Package Quantity | 80 |
| Packaging | Tray |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Test Voltage | 100V |
| Voltage Rating | 250V |
| Width | 9.78mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STAC3932B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
