N-channel power MOSFET featuring 40V drain-source breakdown voltage and 120A continuous drain current. Offers a low 0.0043 Ohm typical on-state resistance. Designed for surface mounting in a D2PAK package, this component operates within a -55°C to 175°C temperature range with a maximum power dissipation of 300W. Key switching characteristics include a 35ns turn-on delay and 50ns fall time.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power300W
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Technical Specifications
Stmicroelectronics STB100NF04T4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
120A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
4.6mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
4.6mR
Dual Supply Voltage
40V
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
5.1nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Surface Mount
Nominal Vgs
4V
On-State Resistance
4.6mR
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
4.6mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Termination
SMD/SMT
Threshold Voltage
2V
Turn-Off Delay Time
80ns
Turn-On Delay Time
35ns
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB100NF04T4 Datasheet
Download the complete datasheet for Stmicroelectronics STB100NF04T4 to view detailed technical specifications.
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