Stmicroelectronics
STB11NM60N-1
10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STB11NM60N-1 technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
600V
Fall Time
12ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
850pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
450mR
RoHS Compliant
Yes
Series
MDmesh™ II
Turn-Off Delay Time
50ns
Turn-On Delay Time
22ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB11NM60N-1 Datasheet
Download the complete datasheet for Stmicroelectronics STB11NM60N-1 to view detailed technical specifications.
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