The STB11NM60N-1 is a N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 10A and a drain to source breakdown voltage of 600V. The device features a drain to source resistance of 450mR and a maximum power dissipation of 90W. It is packaged in a TO-262-3 package and is mounted through a hole. The STB11NM60N-1 is RoHS compliant and is part of the MDmesh II series.
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Stmicroelectronics STB11NM60N-1 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 850pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 22ns |
| RoHS | Compliant |
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