
The STB11NM60N-1 is a N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 10A and a drain to source breakdown voltage of 600V. The device features a drain to source resistance of 450mR and a maximum power dissipation of 90W. It is packaged in a TO-262-3 package and is mounted through a hole. The STB11NM60N-1 is RoHS compliant and is part of the MDmesh II series.
Sign in to ask questions about the Stmicroelectronics STB11NM60N-1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STB11NM60N-1 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 850pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 22ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STB11NM60N-1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
