N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. Offers a low 0.4 Ohm typical drain-source on-resistance and 450mR maximum. Designed for surface mount applications in a D2PAK package, this component operates within a -65°C to 150°C temperature range with 160W maximum power dissipation. Key switching characteristics include 6ns turn-off delay and 11ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STB11NM60T4 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 450mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 450MR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.6mm |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Length | 10.75mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 160W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 6ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 600V |
| Width | 10.4mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STB11NM60T4 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
