N-channel MDmesh™ Power MOSFET featuring 800V drain-source breakdown voltage and 11A continuous drain current. Surface mount D2PAK package offers 400mΩ maximum drain-source on-resistance. Key switching characteristics include a 15ns fall time, 22ns turn-on delay, and 46ns turn-off delay. Maximum power dissipation is 150W with an operating temperature range of -65°C to 150°C.
PackageD2PAK
Current Rating11A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB11NM80T4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
400mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Height
4.6mm
Input Capacitance
1.63nF
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
150W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
400mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
46ns
Turn-On Delay Time
22ns
DC Rated Voltage
800V
Width
10.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB11NM80T4 Datasheet
Download the complete datasheet for Stmicroelectronics STB11NM80T4 to view detailed technical specifications.
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