N-channel power MOSFET featuring 40V drain-source breakdown voltage and 80A continuous drain current. Offers low 3.5 mOhm typical drain-source on-resistance. Designed for surface mounting in a D2PAK package, this component operates from -55°C to 175°C with a maximum power dissipation of 110W. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 20ns.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STB120N4F6 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
4mR
Drain to Source Voltage (Vdss)
40V
Drain-source On Resistance-Max
4MR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
3.85nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
4mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Turn-Off Delay Time
40ns
Turn-On Delay Time
20ns
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB120N4F6 Datasheet
Download the complete datasheet for Stmicroelectronics STB120N4F6 to view detailed technical specifications.
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