The STB13NM50N is a 500V N-channel MOSFET with a maximum continuous drain current of 12A. It features a drain to source breakdown voltage of 500V and a drain to source resistance of 320 milliohms. The device is packaged in a D2PAK-3 package and is suitable for surface mount applications. The STB13NM50N operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power100W
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Technical Specifications
Stmicroelectronics STB13NM50N technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 960pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Rds On Max | 320mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STB13NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STB13NM50N to view detailed technical specifications.
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