Stmicroelectronics
STB13NM50N
12A, 500V, 0.32ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power100W
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Technical Specifications
Stmicroelectronics STB13NM50N technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
320mR
Drain to Source Voltage (Vdss)
500V
Fall Time
10ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
960pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
100W
Radiation Hardening
No
Rds On Max
320mR
RoHS Compliant
Yes
Series
MDmesh™
Turn-Off Delay Time
40ns
Turn-On Delay Time
30ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB13NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STB13NM50N to view detailed technical specifications.
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