MOSFET N-CH 500V 12A I2PAK
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Stmicroelectronics STB13NM50N-1 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 960pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 320mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 40ns |
| RoHS | Compliant |
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