N-CHANNEL MOSFET featuring 75V drain-source breakdown voltage and 120A continuous drain current. This surface-mount device offers a low 7.5mΩ drain-source on-resistance and 310W maximum power dissipation. Operating across a wide temperature range of -55°C to 175°C, it boasts fast switching speeds with a 30ns turn-on delay and 90ns fall time. Packaged in a D2PAK for efficient thermal management, this RoHS compliant component is ideal for high-power switching applications.
PackageD2PAK
Current Rating120A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STB140NF75T4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
120A
Current Rating
120A
Drain to Source Breakdown Voltage
75V
Drain to Source Resistance
7.5mR
Drain to Source Voltage (Vdss)
75V
Drain-source On Resistance-Max
7.5mR
Dual Supply Voltage
75V
Fall Time
90ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
5nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
310W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
310W
Radiation Hardening
No
Rds On Max
7.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
130ns
Turn-On Delay Time
30ns
DC Rated Voltage
75V
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB140NF75T4 Datasheet
Download the complete datasheet for Stmicroelectronics STB140NF75T4 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
