N-Channel POWER MOSFET featuring 500V Drain to Source Breakdown Voltage and 14A Continuous Drain Current. This SuperMesh™ device offers a low 380mΩ Drain-Source On-Resistance and 150W Max Power Dissipation. Designed for surface mount applications, it utilizes a D2PAK package and supports a Gate to Source Voltage of 30V. Key switching characteristics include a 24ns Turn-On Delay Time and 12ns Fall Time. This RoHS compliant component operates within a -55°C to 150°C temperature range.
PackageD2PAK
Current Rating14A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB14NK50ZT4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
14A
Current Rating
14A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
380MR
Dual Supply Voltage
500V
Fall Time
12ns
Gate to Source Voltage (Vgs)
30V
Height
4.6mm
Input Capacitance
2nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Nominal Vgs
3.75V
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
380mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Termination
SMD/SMT
Threshold Voltage
3.75V
Turn-Off Delay Time
54ns
Turn-On Delay Time
24ns
DC Rated Voltage
500V
Width
9.35mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB14NK50ZT4 Datasheet
Download the complete datasheet for Stmicroelectronics STB14NK50ZT4 to view detailed technical specifications.
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