N-channel power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. Offers a low 0.0024 Ohm drain-source on-resistance. Designed for surface mount applications in a D2PAK package, this component boasts a maximum power dissipation of 110W and operates across a wide temperature range of -55°C to 175°C. Key electrical characteristics include a 1V threshold voltage and fast switching times with a 15ns turn-on delay.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STB155N3LH6 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
3MR
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
3.8nF
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VI
Threshold Voltage
1V
Turn-Off Delay Time
100ns
Turn-On Delay Time
15ns
Width
10.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB155N3LH6 Datasheet
Download the complete datasheet for Stmicroelectronics STB155N3LH6 to view detailed technical specifications.
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