N-channel Power MOSFET featuring 60V drain-source breakdown voltage and 16A continuous drain current. This device offers a low 0.07 Ohm typical drain-source on-resistance, with a maximum of 90mR. Designed for surface mounting in a D2PAK package, it operates across a wide temperature range from -55°C to 175°C and supports a maximum power dissipation of 45W. Key switching characteristics include a 10ns turn-on delay and 20ns turn-off delay.
PackageD2PAK
Current Rating16A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STB16NF06LT4 technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
16A
Current Rating
16A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
90MR
Dual Supply Voltage
60V
Fall Time
12.5ns
Gate to Source Voltage (Vgs)
16V
Height
4.6mm
Input Capacitance
345pF
Lead Free
Lead Free
Length
10.75mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
90mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Termination
SMD/SMT
Threshold Voltage
1V
Turn-Off Delay Time
20ns
Turn-On Delay Time
10ns
DC Rated Voltage
60V
Width
10.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STB16NF06LT4 Datasheet
Download the complete datasheet for Stmicroelectronics STB16NF06LT4 to view detailed technical specifications.
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